Position of the Second Gating Charge along S4 in an Intermediate Conformation of a K+ Channel Voltage Sensor
نویسندگان
چکیده
منابع مشابه
Electrostatic interactions of S4 voltage sensor in shaker K+ channel
The S4 segment comprises part of the voltage sensor in Shaker K+ channels. We have used a strategy similar to intragenic suppression, but without a genetic selection, to identify electrostatic interactions of the S4 segment that may be important in the mechanism of voltage-dependent activation. The S4 neutralization mutations K374Q and R377Q block maturation of the protein, suggesting that they...
متن کاملContribution of the S4 Segment to Gating Charge in the Shaker K+ Channel
Voltage-activated ion channels respond to changes in membrane voltage by coupling the movement of charges to channel opening. A K+ channel-specific radioligand was designed and used to determine the origin of these gating charges in the Shaker K+ channel. Opening of a Shaker K+ channel is associated with a displacement of 13.6 electron charge units. Gating charge contributions were determined f...
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The highly charged transmembrane segments in each of the four homologous domains (S4D1-S4D4) represent the principal voltage sensors for sodium channel gating. Hitherto, the existence of a functional specialization of the four voltage sensors with regard to the control of the different gating modes, i.e., activation, deactivation, and inactivation, is problematic, most likely due to a functiona...
متن کاملComponents of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels
The human ether-á-go-go-related gene (hERG) K(+) channel encodes the pore-forming α subunit of the rapid delayed rectifier current, IKr, and has unique activation gating kinetics, in that the α subunit of the channel activates and deactivates very slowly, which focuses the role of IKr current to a critical period during action potential repolarization in the heart. Despite its physiological imp...
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ژورنال
عنوان ژورنال: Biophysical Journal
سال: 2012
ISSN: 0006-3495
DOI: 10.1016/j.bpj.2011.11.2899